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The highest-density claim is that the Intel/Micron floating gate cell technology has more Gb/mm than alternative charge-trap technology used by San Disk and, we understand, Samsung.
Whether that means the resulting chips have higher density than Samsung, the only shipping 3D NAND supplier today, is another matter.
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The D3700 has worse random write performance and worse sequential IO performance than the P3700, surpassing it only with random read IO.
Intel hasn’t yet revealed its 3D NAND chip capacity.
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The P3520 is aimed at online and hyper-converged system use cases.
Intel claims that these two new SSDS have up to 98 per cent of all IOs sharing the same performance characteristics and that their performance degrades by five per cent or less over their life.